- 扩散长度
- 扩散距离
- diffusion: n. 1.散布，发散。 2.传播，普及。 3.冗长。 4 ...
- length: n. 1.长，长度，长短。 2.(时间的)长短，期间。 ...
- cavity diffusion length: 共振腔扩散长度
- electron diffusion length: 电子扩散长度
- fast neutron diffusion length: 快中子扩散长度
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diffusion length中文什么意思
- 扩散长度
- 扩散距离
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例句与用法
- The impact of the effective resist diffusion length to the exposure latitude and mef ( mask error factor ) for the 0 . 13 m photolithography and beyond is presented
展示了在0 . 13 m及以下工艺中等效扩散对能量裕度和掩模版误差因子的影响的研究结果。 - How to use the measured effective diffusion length and scanner illumination condition to demonstrate photolithography line width uniformity is introduced
摘要介绍了如何通过测量得出的等效扩散长度和光刻机的照明条件来对任何光刻工艺的线宽均匀性进行评估。 - Generally the minority carriers accumulated by the cell are generated either directly from the p - n junction or the distance between the generated minority carriers and the junction is less than the diffusion length of the minority carriers
通常的太阳电池收集的少数载流子要么是产生于p - n结,要么是少数载流子距离结的距离必须小于其扩散长度。 - Based on the energy band characteristics of ordinary negative electron affinity emitter gaas , the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented , and the special negative electron affinity emitter gaas was designed
摘要根据通常负电子亲和势二次电子发射材料砷化镓的能级特点，提出延长负电子亲和势二次电子发射材料砷化镓的逸出深度的理论设计，设计出了特殊的负电子亲和势二次电子发射材料砷化镓。 - The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy . on the basis of the new concept suggested in this paper , the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following . the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
本文根据柱状结构存在各向异性的特点，并根据半导体物理知识，推出光导层光生载流子横向最大扩散长度(该扩散长度与液晶光阀光导层分辨率直接相关)与薄膜横向和纵向电导率关系的表达式为：由于a - si ： h在al金属的诱导作用下在不高于250的温度下即开始晶化，本文对用金属al诱导非晶硅晶化制备的nc - si a - si ： h薄膜进行研究。